Electrical properties of sol–gel derived MPB 0.37BiScO3–0.63PbTiO3 thin films deposited on iridium oxide electrodes

Journal of Materials Chemistry Pub Date: 2009-06-19 DOI: 10.1039/B900970A

Abstract

The characterization of sol–gel derived morphotropic phase boundary (MPB) 0.37BiScO3–0.63PbTiO3 (BSPT) thin films, deposited on IrO2/TiO2/SiO2/Si and Pt/TiO2/SiO2/Si substrates, was performed to identify the influence of the IrO2electrodes on the film's microstructure and electrical properties. Though the ferroelectric behaviour of both films is similar, with remanent polarization values of 26 μC cm?2 and 23 μC cm?2, respectively, for IrO2 and Pt bottom electroded films, the leakage current density (JL) at room temperature markedly decreases from > 10?6 A cm?2 for BSPT on Pt to the order of ≤ 10?8 A cm?2 for BSPT on IrO2, under the maximum voltage of 4 V (～80 kV cm?1). The formation of an interface layer between the film and the electrode, as observed by Rutherford Backscattering Spectroscopy, is proposed to have a space charge sink effect and, as a consequence, to account for the improvement of the leakage current behaviour of the IrO2 electroded films.

Graphical abstract: Electrical properties of sol–gel derived MPB 0.37BiScO3–0.63PbTiO3 thin films deposited on iridium oxide electrodes
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