Air-stable and efficient electron doping of monolayer MoS2 by salt–crown ether treatment?

Nanoscale Pub Date: 2021-04-15 DOI: 10.1039/D1NR01279G

Abstract

To maximize the potential of transition-metal dichalcogenides (TMDCs) in device applications, the development of a sophisticated technique for stable and highly efficient carrier doping is critical. Here, we report the efficient n-type doping of monolayer MoS2 using KOH/benzo-18-crown-6, resulting in a doped TMDC that is air-stable. MoS2 field-effect transistors show an increase in on-current of three orders of magnitude and degenerate the n-type behaviour with high air-stability for ～1 month as the dopant concentration increases. Transport measurements indicate a high electron density of 3.4 × 1013 cm?2 and metallic-type temperature dependence for highly doped MoS2. First-principles calculations support electron doping via surface charge transfer from the K/benzo-18-crown-6 complex to monolayer MoS2. Patterned doping is demonstrated to improve the contact resistance in MoS2-based devices.

Graphical abstract: Air-stable and efficient electron doping of monolayer MoS2 by salt–crown ether treatment
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