Synthesis, characterization and field-effect transistor performance of a benzoannulated pentathienoacene derivative

New Journal of Chemistry Pub Date: 2014-11-18 DOI: 10.1039/C4NJ01590H

Abstract

A novel benzoannulated pentathienoacene derivative dihexyl-[1]benzothieno[2′′,3′′:4′,5′]thieno[2′′,3′′:4,5;5′′,4′′:4′,5′]bisthieno[3,2-b:3′,2′-b′][1]benzothiophene was designed and synthesized. UV-vis spectra, electrochemistry and thermogravimetric analysis results reveal that this material has a large energy bandgap, low-lying highest occupied molecular orbital level and good thermal stability. Atomic force microscopy demonstrates that the thin films show high surface roughness and consisted of interconnected sheet-like crystalline grains. A highly ordered aggregation structure in grains was evidenced by X-ray diffraction measurements. Mobility up to 0.04 cm2 V?1 s?1 and an on/off ratio over 105 were achieved for the thin film field-effect transistors. These results suggest that this new benzoannulated pentathienoacene derivative is an important member of the thienoacene family and will contribute to a comprehensive analysis of the structure–property relationship of the thienoacene analogue.

Graphical abstract: Synthesis, characterization and field-effect transistor performance of a benzoannulated pentathienoacene derivative
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