Achieving single domain relaxor-PT crystals by high temperature poling

CrystEngComm Pub Date: 2014-01-28 DOI: 10.1039/C3CE42330A

Abstract

Single domain relaxor-PT crystals are important from both fundamental and application viewpoints. Compared to domain engineered relaxor-PT crystals, however, single domain crystals are prone to cracking during poling. In this paper, based on the analysis of the cracking phenomenon in [001] poled tetragonal 0.25Pb(In0.5Nb0.5)O3–0.37Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 (PIN–PMN–PT) crystals, the non-180° ferroelastic domain switching was thought to be the dominant factor for cracking during the poling process. A high temperature poling technique, by which the domain switching can be greatly avoided, was proposed to achieve the single domain relaxor-PT crystals. By this poling approach, a quasi-single domain crystal was obtained without cracks. In addition, compared to room temperature poling, the high temperature poled PIN–PMN–PT crystals showed improved electromechanical properties, i.e., a low dielectric loss, a low strain–electric field hysteresis and a high mechanical quality factor, demonstrating a beneficial poling approach.

Graphical abstract: Achieving single domain relaxor-PT crystals by high temperature poling
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