Inverted quantum-dot light emitting diodes with cesium carbonate doped aluminium-zinc-oxide as the cathode buffer layer for high brightness?

Journal of Materials Chemistry C Pub Date: 2013-04-26 DOI: 10.1039/C3TC30505H

Abstract

We report an inverted structure of quantum-dot light emitting diodes (QLEDs) with cesium carbonate (Cs2CO3) doped aluminum-zinc-oxide (AZO) as the cathode buffer. The Cs2CO3 doped AZO with Cs2CO3 blending ratios (AZO?:?Cs2CO3) from 4?:?1 to 2?:?1 was used as an electron transport layer in QLEDs. It is found that the conductivity of the AZO?:?Cs2CO3 blended solution increases with the increase in the concentration of Cs2CO3 until a particular concentration, and the luminance intensity increases sharply from 9949 to 57?350 cd m?2. It is concluded therefore that Cs2CO3 doped AZO could be a good cathode buffer for inverted QLEDs.

Graphical abstract: Inverted quantum-dot light emitting diodes with cesium carbonate doped aluminium-zinc-oxide as the cathode buffer layer for high brightness
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