Flexible and low-voltage organic phototransistors

RSC Advances Pub Date: 2017-02-15 DOI: 10.1039/C6RA28821A

Abstract

A stripping procedure was demonstrated for the preparation of an ultra-smooth aluminum electrode. After potentiostatic anodization and treatment with a self-assembled monolayer (SAM) of n-octadecyl phosphonic acid, AlOx–SAM hybrid dielectrics were grown onto flexible, stripped aluminum combining low cost manufacture under ambient conditions with excellent dielectric characteristics (negligible leakage, 114.3 nF cm?2 capacitance). Field effect transistors using dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) as an organic semiconductor can be operated below ?5 V with a high mobility of 0.53 cm2 V?1 s?1, high on/off current ratio of 1.7 × 105, low subthreshold slope of 210 mV dec?1, and good threshold of ?1.51 V. Moreover, the DNTT transistor showed a good photoresponse to blue light with a wavelength of 450 nm, with photoresponsivity (R) of 50 A W?1 and a photocurrent/dark current ratio (P) of 5 at a light intensity of 5 μW cm?2.

Graphical abstract: Flexible and low-voltage organic phototransistors
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