The deposition of thin films of CuME2 by CVD techniques (M = In, Ga and E = S, Se)

Journal of Materials Chemistry Pub Date: 2003-06-25 DOI: 10.1039/B302896H

Abstract

Thin film(s) of chalcopyrite CuME2 (where M = In or Ga; E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) or aerosol-assisted chemical vapour deposition (AACVD) using the precursors M(E2CNMenHex)3 and Cu(E2CNMenHex)2. Films were grown on various substrates between 350–500 °C and characterized by X-ray diffraction, XPS, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

Graphical abstract: The deposition of thin films of CuME2 by CVD techniques (M = In, Ga and E = S, Se)
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