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La2S3 thin films from metal organic chemical vapor deposition of single-source precursor

Journal of Materials Chemistry Pub Date: 2005-11-03 DOI: 10.1039/B511981B

Abstract

Thin films of lanthanum sulfide (La₂S₃) have been prepared from [La(bipy)(S₂CNEt₂)₃] by using metal organic chemical vapor deposition (MOCVD) on different substrates. The preparative parameters, such as substrate temperature and the nature of substrates, are optimized to get well-defined cubic phase (γ) lanthanum sulfide thin films. The optimized films are characterized by means of X-ray powder diffraction (XRPD) techniques, scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and in-situ X-ray photoelectron spectroscopy (XPS).

Graphical abstract: La2S3 thin films from metal organic chemical vapor deposition of single-source precursor

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Journal Name：Journal of Materials Chemistry

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