High performance organic field-effect transistors based on [2,2′]bi[naphtho[2,3-b]thiophenyl] with a simple structure?

Journal of Materials Chemistry Pub Date: 2008-06-04 DOI: 10.1039/B801425F

Abstract

A novel semiconductor with naphtho[2,3-b]thiophene rings was synthesized and characterized by using single crystal X-ray structure analysis, absorption and emission spectra, electrochemical measurements, quantum chemical calculations, thin-film X-ray diffraction and AFM studies. FET devices using the molecule as the active layer showed high mobilities and high air stability. The hole mobility was enhanced to 0.67 cm2V?1 s?1 in air.

Graphical abstract: High performance organic field-effect transistors based on [2,2′]bi[naphtho[2,3-b]thiophenyl] with a simple structure
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