Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pendant?

Journal of Materials Chemistry Pub Date: 2011-11-01 DOI: 10.1039/C1JM13849A

Abstract

A new polyimide bearing the functional pendant 9-phenyl-9H-carbazole moieties, poly[2,2-(4,4′-di(N-benzyloxycarbazole)-3,3′-biphenylene)propane-hexafluoroisopropylidenediphthalimide] (6F-BAHP-PC PI), has been designed as a functional material for resistance memory devices. The ITO/6F-BAHP-PC PI/Ag memory device exhibits nonvolatile resistive switching (RS) with a high ON/OFF ratio (>106), long retention time (>6 × 104 s), good endurance, and low power consumption (~100 μW). In situconductive atomic force microscopy measurements show that the RS of 6F-BAHP-PC PI originates from the formation/rupture of nanoscale conducting filaments.

Graphical abstract: Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pendant
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