Reactive etching of gallium oxide on eutectic gallium indium (eGaIn) with chlorosilane vapor to induce differential wetting?

Soft Matter Pub Date: 2023-04-06 DOI: 10.1039/D3SM00258F

Abstract

Differentially wettable surfaces are well sought after in energy, water, health care, separation science, self-cleaning, biology, and other lab-on-chip applications—however, most demonstrations of realizing differential wettability demand complex processes. Herein, we chemically etch gallium oxide (Ga2O3) from in-plane patterns (2D) of eutectic gallium indium (eGaIn) to demonstrate a differentially wettable interface using chlorosilane vapor. We produce 2D patterns of eGaIn on bare glass slides in native air using cotton swabs as paint brushes. Exposing the entire system to chlorosilane vapor induces chemical etching of the oxide layer, which recovers the high-surface energy of eGaIn, to produce nano-to-mm droplets on the pre-patterned area. We rinse the entire system with deionized (DI) water to achieve differentially wettable surfaces. Measurements of contact angles using a goniometer confirmed hydrophobic and hydrophilic interfaces. Scanning electron microscopy (SEM) images confirmed the distribution and energy dispersive spectra (EDS) exhibited the elemental compositions of the micro-to-nano droplets after silanization (silane treatment). Also, we demonstrated two proofs of concept, i.e., open-ended microfluidics and differential wettability on curved interfaces, to demonstrate the advanced applications of the current work. This straightforward approach using two soft materials (silane and eGaIn) to achieve differential wettability on laboratory-grade glass slides and other surfaces has future implications for nature-inspired self-cleaning surfaces in nanotechnologies, bioinspired and biomimetic open-channel microfluidics, coatings, and fluid-structure interactions.

Graphical abstract: Reactive etching of gallium oxide on eutectic gallium indium (eGaIn) with chlorosilane vapor to induce differential wetting
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