FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors?
Chemical Communications Pub Date: 2012-10-09 DOI: 10.1039/C2CC35439J
Abstract
Hole mobility was evaluated by top-contact bottom gate field effect transistor and
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Journal Name:Chemical Communications
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CAS no.: 89640-58-4