FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors?

Chemical Communications Pub Date: 2012-10-09 DOI: 10.1039/C2CC35439J

Abstract

Hole mobility was evaluated by top-contact bottom gate field effect transistor and time resolved microwave conductivity measurements in 2,6-dithienylanthracene and hexyl-substituted 2,6-dithienylanthracene films prepared by spin-coating of their α-diketone precursors followed by photoirradiation, revealing enough high potentials for semiconducting films with charge carrier mobilities of 0.8–0.9 cm2 V?1 s?1 in the photo-irradiated films.

Graphical abstract: FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors
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