Fabrication of an efficient electrodeposited Cu2ZnSnS4-based solar cells with more than 6% conversion efficiency using a sprayed Ga-doped ZnO window layer
RSC Advances Pub Date: 2014-05-22 DOI: 10.1039/C4RA03857F
Abstract
By the combination of electrochemical deposition of a high-quality Cu2ZnSnS4 (CZTS) thin film photoabsorber and low-temperature spray deposition of Ga-doped ZnO (GZO) transparent conductive oxide, we fabricated a non-vacuum-processed CZTS solar cell. Despite various unoptimized parameters for the TCO layer, such as deposition temperatures and control of film thicknesses, we could obtain the best conversion efficiency of 6.43% with a short circuit current density, an open circuit voltage and a fill factor of 16.6 mA cm?2, 678 mV and 0.571, respectively.
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Journal Name：RSC Advances
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CAS no.: 89640-58-4
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