Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors?

Chemical Science Pub Date: 2016-06-13 DOI: 10.1039/C6SC01380E

Abstract

With sp2-nitrogen atoms embedded in an isatin unit, a donor–acceptor (D–A) conjugated polymer AzaBDOPV-2T was developed with a low LUMO level down to ?4.37 eV. The lowered LUMO level as well as the conformation-locked planar backbone provide AzaBDOPV-2T with electron mobilities over 3.22 cm2 V?1 s?1 tested under ambient conditions, which is among the highest in n-type polymer field-effect transistors (FETs). Our results demonstrate that embedding electron-deficient sp2-nitrogen in conjugated backbones is an effective approach to develop n-type polymer semiconductors with high performance.

Graphical abstract: Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors
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